Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SC5439 2SC5439

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 197546-2SC5439
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 1V @ 640mA, 3.2A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 14 @ 1A, 5V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

TRANS NPN 450V 8A TO220NIS Product overview: 2SC5439 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC5439 can be used for catalog matching and distributor lookup.