Trans GP BJT NPN 12V 0.4A 3-Pin ESM Product overview: 2SC5376F-B from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.4A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.4A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5376F-B can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 157045-2SC5376F-B
Category: Discrete Semiconductor Products
Family: RF Transistors(BJT)
Family Name: 2SC5376FB
Alternative Parts (Cross-Reference): PBSS2515E/DG; 2SC5585; KTC4072E; PBSS2515E;
Introduction Date: January 15, 2002
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: Obsolete / End of life
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 283-2SC5376F-B | 157045-2SC5376F-B |
| Product Name | 12V 0.4A Bipolar Transistor | Discrete Semiconductor Products |
| Package Type | SOT3 |
