The 2SC5376 is a silicon NPN epitaxial transistor for audio frequency general purpose amplification, muting, and switching applications. It is packaged in a small form factor with a weight of 2.4 mg. It has a maximum collector current of 400 mA, a collector-emitter voltage rating of 12 V, and a collector power dissipation of 100 mW. The transistor exhibits a typical collector saturation voltage of 15 mV at IC = 10 mA and IB = 0.5 mA, and a DC current gain (hFE) ranging from 300 to 1000 depending on classification. It operates with a junction temperature up to 125 °C and a storage temperature range from −55 to 125 °C. The part meets no stated environmental or qualification standards.
2SC5376 - Transistor Silicon NPN Epitaxial Type
| Rochester Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 2SC5376-B,LF(B |
| Polarity | NPN |
