Toshiba Semiconductor & Storage Products 2SC5376-A,LF(B

Description
2SC5376 - Transistor Silicon NPN Epitaxial Type
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Description
2SC5376 - Transistor Silicon NPN Epitaxial Type
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Datasheet
Datasheet Summary
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2SC5376 is a silicon NPN epitaxial transistor for audio frequency general purpose amplification, muting, and switching applications. It is packaged in a standard case with a weight of 2.4 mg. Maximum ratings include a collector-emitter voltage of 12 V, a collector current of 400 mA, and a power dissipation of 100 mW. The transistor features a low collector-emitter saturation voltage of 15 mV at IC = 10 mA and IB = 0.5 mA, a DC current gain (hFE) ranging from 300 to 1000, and a transition frequency of 80 to 130 MHz. Junction and storage temperature ranges are from -55°C to 125°C.

Datasheet Summary
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2SC5376 is a silicon NPN epitaxial transistor for audio frequency general purpose amplification, muting, and switching applications. It is packaged in a standard case with a weight of 2.4 mg. Maximum ratings include a collector-emitter voltage of 12 V, a collector current of 400 mA, and a power dissipation of 100 mW. The transistor features a low collector-emitter saturation voltage of 15 mV at IC = 10 mA and IB = 0.5 mA, a DC current gain (hFE) ranging from 300 to 1000, and a transition frequency of 80 to 130 MHz. Junction and storage temperature ranges are from -55°C to 125°C.

Suppliers

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Product
Description
Supplier Links
 - 2SC5376-A,LF(B - Rochester Electronics
Newburyport, MA, United States
2SC5376 - Transistor Silicon NPN Epitaxial Type

2SC5376 - Transistor Silicon NPN Epitaxial Type

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SC5376-A,LF(B
Polarity NPN
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