Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Single - 2SC5233BTE85LF 2SC5233BTE85LF

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 106818-2SC5233BTE85L F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package: USM Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 500 @ 10mA, 2V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 106818-2SC5233BTE85L F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package: USM Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 500 @ 10mA, 2V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
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TRANSISTORS - Transistors (BJT) - Single - 2SC5233BTE85LF - 106818-2SC5233BTE85LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC5233BTE85LF
106818-2SC5233BTE85LF
TRANSISTORS - Transistors (BJT) - Single - 2SC5233BTE85LF 106818-2SC5233BTE85LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 106818-2SC5233BTE85L F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 125°C (TJ) Case / Package: USM Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 500 @ 10mA, 2V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 106818-2SC5233BTE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 125°C (TJ)
Case / Package: USM
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 500 @ 10mA, 2V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5233BTE85LF - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5233BTE85LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5233BTE85LF
TRANS NPN 12V 0.5A USM

TRANS NPN 12V 0.5A USM

Supplier's Site

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors
Product Number 106818-2SC5233BTE85LF 2SC5233BTE85LF
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC5233BTE85LF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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