Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SC5086-Y 2SC5086-Y

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 156893-2SC5086-Y
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Family Name: 2SC5086Y
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SSM
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 120 @ 20mA, 10V
Maximum Power Dissipation: 100mW
Alternative Parts (Cross-Reference): 2SC5086-Y(TE85L,F); NE85630-T1-A; 2SC3357-A;
Introduction Date: October 21, 1997
ECCN: EAR99
Country of Origin: Japan, Thailand
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Trans RF BJT NPN 12V 0.08A 3-Pin SSM / TRANS RF NPN 12V 1MHZ SSM Product overview: 2SC5086-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.08A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.08A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5086-Y can be used for catalog matching and distributor lookup.