Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SC5086-Y 2SC5086-Y

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 156893-2SC5086-Y Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 500MHz Family Name: 2SC5086Y Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SSM Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 120 @ 20mA, 10V Maximum Power Dissipation: 100mW Alternative Parts (Cross-Reference): 2SC5086-Y(TE85L,F); NE85630-T1-A; 2SC3357-A; Introduction Date: October 21, 1997 ECCN: EAR99 Country of Origin: Japan, Thailand Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 156893-2SC5086-Y Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 500MHz Family Name: 2SC5086Y Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SSM Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 120 @ 20mA, 10V Maximum Power Dissipation: 100mW Alternative Parts (Cross-Reference): 2SC5086-Y(TE85L,F); NE85630-T1-A; 2SC3357-A; Introduction Date: October 21, 1997 ECCN: EAR99 Country of Origin: Japan, Thailand Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - 2SC5086-Y - 156893-2SC5086-Y - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5086-Y
156893-2SC5086-Y
TRANSISTORS - RF Transistors (BJT) - 2SC5086-Y 156893-2SC5086-Y
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 156893-2SC5086-Y Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 500MHz Family Name: 2SC5086Y Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SSM Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 120 @ 20mA, 10V Maximum Power Dissipation: 100mW Alternative Parts (Cross-Reference): 2SC5086-Y(TE85L,F); NE85630-T1-A; 2SC3357-A; Introduction Date: October 21, 1997 ECCN: EAR99 Country of Origin: Japan, Thailand Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 156893-2SC5086-Y
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Family Name: 2SC5086Y
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SSM
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 120 @ 20mA, 10V
Maximum Power Dissipation: 100mW
Alternative Parts (Cross-Reference): 2SC5086-Y(TE85L,F); NE85630-T1-A; 2SC3357-A;
Introduction Date: October 21, 1997
ECCN: EAR99
Country of Origin: Japan, Thailand
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 156893-2SC5086-Y
Product Name TRANSISTORS - RF Transistors (BJT) - 2SC5086-Y
Polarity NPN; NPN
Package Type SOT3; SSM
Packing Method Tape Reel; Reel - TR
IC(max) 80 milliamps
VCEO 12 volts
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