Toshiba Electronics (UK) Ltd TRANSISTORS - RF Transistors (BJT) - 2SC5084YTE85LF 2SC5084YTE85LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 096255-2SC5084YTE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 11dB
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SC-59
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 120 @ 20mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

TRANSISTOR NPN MM S-MINI Product overview: 2SC5084YTE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5084YTE85LF can be used for catalog matching and distributor lookup.