Toshiba Electronics (UK) Ltd Bipolar RF Transistors 2SC5066-O,LF

Description
RF TRANS NPN 12V 7GHZ SSM
  • Bipolar RF Transistors - 2SC5066-O,LF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - RF Transistors (BJT) - 2SC5066-O,LF - 106690-2SC5066-O,LF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5066-O,LF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
RF TRANS NPN 12V 7GHZ SSM
Request a Quote Datasheet

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Bipolar RF Transistors - 2SC5066-O,LF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5066-O,LF
Bipolar RF Transistors 2SC5066-O,LF
RF TRANS NPN 12V 7GHZ SSM

RF TRANS NPN 12V 7GHZ SSM

Supplier's Site
TRANSISTORS - RF Transistors (BJT) - 2SC5066-O,LF - 106690-2SC5066-O,LF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5066-O,LF
106690-2SC5066-O,LF
TRANSISTORS - RF Transistors (BJT) - 2SC5066-O,LF 106690-2SC5066-O,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 106690-2SC5066-O,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 500MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: SSM Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 106690-2SC5066-O,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SSM
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5066-O,LF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5066-O,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5066-O,LF
RF TRANS NPN 12V 7GHZ SSM

RF TRANS NPN 12V 7GHZ SSM

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 2SC5066-O,LF 106690-2SC5066-O,LF 2SC5066-O,LF
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - 2SC5066-O,LF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN
Package Type SC-75, SOT-416 SOT3; SSM
IC(max) 30 milliamps
VCEO 12 volts 12 volts
Noise Figure 1 dB
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