Toshiba Electronics (UK) Ltd TRANSISTORS - RF Transistors (BJT) - 2SC4915-Y,LF 2SC4915-Y,LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 100685-2SC4915-Y,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 17dB to 23dB
Frequency - Transition: 550MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2.3dB to 5dB @ 100MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SSM
Maximum Current Collector: 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Typical Gain (hFE) (Min): 100 @ 1mA, 6V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

RF TRANS NPN 30V 550MHZ SSM Product overview: 2SC4915-Y,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 550MHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 550MHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC4915-Y,LF can be used for catalog matching and distributor lookup.

RF TRANS NPN 30V 550MHZ SSM