Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SC4322TE85L 2SC4322TE85L

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037221-2SC4322TE85L
Number of Pins: 3
Categories: RF Transistors(BJT)
Alternative Parts (Cross-Reference): 2SC4322TE85L2SC4322(TE85L); 2SC4322-TE85L;
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 125 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Power Dissipation: 150 mW
Collector Base Voltage (VCBO): 20 V
Collector Emitter Voltage (VCEO): 10 V
Max Collector Current: 15 mA

Product overview: 2SC4322TE85L from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC4322TE85L can be used for catalog matching and distributor lookup.