Toshiba America Electronic Components, Inc. 30V 20MA Bipolar Transistor 2SC4215-O

Description
RF TRANS NPN 30V 20MA SC70 Product overview: 2SC4215-O from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20MA. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 20MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC4215-O can be used for catalog matching and distributor lookup.
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Description
RF TRANS NPN 30V 20MA SC70 Product overview: 2SC4215-O from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20MA. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 20MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC4215-O can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
30V 20MA Bipolar Transistor
283-2SC4215-O
30V 20MA Bipolar Transistor 283-2SC4215-O
RF TRANS NPN 30V 20MA SC70 Product overview: 2SC4215-O from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20MA. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 20MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC4215-O can be used for catalog matching and distributor lookup.

RF TRANS NPN 30V 20MA SC70 Product overview: 2SC4215-O from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20MA. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 20MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC4215-O can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - 2SC4215-O - 156357-2SC4215-O - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC4215-O
156357-2SC4215-O
TRANSISTORS - RF Transistors (BJT) - 2SC4215-O 156357-2SC4215-O
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 156357-2SC4215-O Packaging: Reel - TR Mounting: SMD (SMT) Gain: 23dB Frequency - Transition: 550MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 5dB @ 100MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: USM Maximum Current Collector: 20mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Typical Gain (hFE) (Min): 40 @ 1mA, 6V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 156357-2SC4215-O
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 23dB
Frequency - Transition: 550MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 5dB @ 100MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: USM
Maximum Current Collector: 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Typical Gain (hFE) (Min): 40 @ 1mA, 6V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 283-2SC4215-O 156357-2SC4215-O
Product Name 30V 20MA Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - 2SC4215-O
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; USM
Packing Method Reel - TR
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