Toshiba Corporation 12V 0.08A Bipolar Transistor 2SC3606TE85L

Description
Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R Product overview: 2SC3606TE85L from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.08A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.08A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC3606TE85L can be used for catalog matching and distributor lookup.
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Description
Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R Product overview: 2SC3606TE85L from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.08A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.08A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC3606TE85L can be used for catalog matching and distributor lookup.
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Singapore, Singapore
12V 0.08A Bipolar Transistor
283-2SC3606TE85L
12V 0.08A Bipolar Transistor 283-2SC3606TE85L
Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R Product overview: 2SC3606TE85L from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.08A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.08A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC3606TE85L can be used for catalog matching and distributor lookup.

Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R Product overview: 2SC3606TE85L from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.08A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.08A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC3606TE85L can be used for catalog matching and distributor lookup.

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Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors
Product Number 283-2SC3606TE85L
Product Name 12V 0.08A Bipolar Transistor
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