Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SC3423-Y(Q) 2SC3423-Y(Q)

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037059-2SC3423-Y(Q)
Polarity: NPN
Gain Bandwidth Product: 200 MHz
Categories: RF Transistors(BJT)
Alternative Parts (Cross-Reference): DTC123JKAT146; DTC143ZKAT146; DTC143ZUAT106; MMBT5551LT1G; DTC143ZET1G; MUN5314DW1T1G2SC3423Y(Q);
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
RoHS: Compliant
Element Configuration: Single
Max Power Dissipation: 5 W
Collector Base Voltage (VCBO): 150 V
Collector Emitter Voltage (VCEO): 150 V
Emitter Base Voltage (VEBO): 5 V
hFE Min: 80

Trans GP BJT NPN 150V 0.05A 1200mW 3-Pin(3+Tab) TO-126IS Product overview: 2SC3423-Y(Q) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 0.05A, 1200mW. Search-friendly keywords include transistor, BJT, switching, amplification, 150V, 0.05A, 1200mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC3423-Y(Q) can be used for catalog matching and distributor lookup.