The 2SC3326 is a silicon NPN epitaxial transistor for switching and muting applications, housed in the JEDEC TO-236MOD (JEITA SC-59) package measuring 2.9 mm × 2.8 mm × 1.3 mm with a weight of 0.012 g. It has a collector-emitter voltage rating of 20 V, a collector current of 300 mA, and a collector power dissipation of 150 mW. The device features a high DC current gain (hFE) ranging from 200 to 1200, an emitter-base voltage of 25 V, and a typical on resistance of 1 Ω at IB = 5 mA. It meets RoHS compliance and is qualified under JEDEC and JEITA standards. The part is not intended for use in safety-critical or high-reliability applications such as medical, automotive, or aerospace systems.
TRANS NPN 20V 0.3A S-MINI Product overview: 2SC3326-B from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.3A. Search-friendly keywords include transistor, BJT, switching, amplification, 20V, 0.3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC3326-B can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2SC3326-B |
| Product Name | 20V 0.3A Bipolar Transistor |
| Polarity | NPN |
