Toshiba Electronics (UK) Ltd Single Bipolar Transistors 2SC3324GRTE85LF

Description
Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236
  • Single Bipolar Transistors - 2SC3324GRTE85LFTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SC3324GRTE85LF - 103513-2SC3324GRTE85LF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3324GRTE85LF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2SC3324GRTE85LFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC3324GRTE85LFTR-ND
Single Bipolar Transistors 2SC3324GRTE85LFTR-ND
Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236

Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC3324GRTE85LF - 103513-2SC3324GRTE85LF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3324GRTE85LF
103513-2SC3324GRTE85LF
TRANSISTORS - Transistors (BJT) - Single - 2SC3324GRTE85LF 103513-2SC3324GRTE85LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 103513-2SC3324GRTE85 LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: TO-236 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 103513-2SC3324GRTE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: TO-236
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC3324GRTE85LF
Bipolar Transistors - BJT 2SC3324GRTE85LF
Bipolar Transistors - BJT Audio Freq Low Audio Freq Low

Bipolar Transistors - BJT Audio Freq Low Audio Freq Low

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3324GRTE85LF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3324GRTE85LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3324GRTE85LF
TRANS NPN 120V 0.1A TO236

TRANS NPN 120V 0.1A TO236

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SC3324GRTE85LFTR-ND 103513-2SC3324GRTE85LF 2SC3324GRTE85LF 2SC3324GRTE85LF
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SC3324GRTE85LF Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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