Toshiba Electronics (UK) Ltd Single Bipolar Transistors 2SC2383-Y(T6DNS,FM

Bipolar (BJT) Transistor NPN 160V 1A 100MHz 900mW Through Hole TO-92MOD

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1027097-2SC2383-Y(T6DNS,FM
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92MOD
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 60 @ 200mA, 5V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

TRANS NPN 160V 1A TO92MOD Product overview: 2SC2383-Y(T6DNS,FM from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC2383-Y(T6DNS,FM can be used for catalog matching and distributor lookup.