Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SC2235-Y 2SC2235-Y

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 197512-2SC2235-Y Packaging: Bulk Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92MOD Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 1V @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 80 @ 100mA, 5V Maximum Power Dissipation: 900mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 197512-2SC2235-Y Packaging: Bulk Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92MOD Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 1V @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 80 @ 100mA, 5V Maximum Power Dissipation: 900mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single - 2SC2235-Y - 197512-2SC2235-Y - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC2235-Y
197512-2SC2235-Y
TRANSISTORS - Transistors (BJT) - Single - 2SC2235-Y 197512-2SC2235-Y
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 197512-2SC2235-Y Packaging: Bulk Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92MOD Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 1V @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 80 @ 100mA, 5V Maximum Power Dissipation: 900mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 197512-2SC2235-Y
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 120MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92MOD
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 1V @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 100mA, 5V
Maximum Power Dissipation: 900mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
800MA 120V Bipolar Transistor
276-2SC2235-Y
800MA 120V Bipolar Transistor 276-2SC2235-Y
TRANS NPN 800MA 120V TO226-3 Product overview: 2SC2235-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800MA, 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 800MA, 120V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC2235-Y can be used for catalog matching and distributor lookup.

TRANS NPN 800MA 120V TO226-3 Product overview: 2SC2235-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800MA, 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 800MA, 120V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SC2235-Y can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Bipolar RF Transistors
Product Number 197512-2SC2235-Y 276-2SC2235-Y
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC2235-Y 800MA 120V Bipolar Transistor
Polarity NPN; NPN NPN
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