Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SB906-Y 2SB906-Y

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 114450-2SB906-Y
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 9MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PW-MOLD
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.7V @ 300mA, 3A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 500mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

TRANS PNP 60V 3A PW-MOLD Product overview: 2SB906-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB906-Y can be used for catalog matching and distributor lookup.