Toshiba America Electronic Components, Inc. 3A 60V TO220 Bipolar Transistor 2SB1375

Description
TRANS PNP 3A 60V TO220-3 Product overview: 2SB1375 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1375 can be used for catalog matching and distributor lookup.
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Description
TRANS PNP 3A 60V TO220-3 Product overview: 2SB1375 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1375 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
3A 60V TO220 Bipolar Transistor
276-2SB1375
3A 60V TO220 Bipolar Transistor 276-2SB1375
TRANS PNP 3A 60V TO220-3 Product overview: 2SB1375 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1375 can be used for catalog matching and distributor lookup.

TRANS PNP 3A 60V TO220-3 Product overview: 2SB1375 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1375 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SB1375 - 154646-2SB1375 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1375
154646-2SB1375
TRANSISTORS - Transistors (BJT) - Single - 2SB1375 154646-2SB1375
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 154646-2SB1375 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 9MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 1.5V @ 200mA, 2A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 100 @ 500mA, 5V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 154646-2SB1375
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 9MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.5V @ 200mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 500mA, 5V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SB1375 154646-2SB1375
Product Name 3A 60V TO220 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SB1375
Polarity PNP PNP; PNP
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