Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SB1375 2SB1375

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 154646-2SB1375
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 9MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.5V @ 200mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 500mA, 5V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

TRANS PNP 3A 60V TO220-3 Product overview: 2SB1375 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1375 can be used for catalog matching and distributor lookup.