Toshiba America Electronic Components, Inc. 200V 15A 220000mW Bipolar Transistor 2SA2121-O(Q)

Trans GP BJT PNP 200V 15A 220000mW 3-Pin(3+Tab) TO-3PL Tray Product overview: 2SA2121-O(Q) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 15A, 220000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 200V, 15A, 220000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA2121-O(Q) can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1036636-2SA2121-O(Q)
Mounting: SMD (SMT)
Frequency: 25 MHz
Polarity: PNP
Number of Elements: 1
Power Dissipation: 220 W
Gain Bandwidth Product: 25 MHz
Number of Pins: 3
Categories: RF Transistors(BJT)
Case / Package: TO-264-3
Alternative Parts (Cross-Reference): MJL0302AG; MJL0302A; MJL0281AG; FJL6825ATU2SA2121O(Q);
Popularity: Low
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 220 W
Collector Base Voltage (VCBO): 200 V
Collector Emitter Breakdown Voltage: 200 V
Collector Emitter Voltage (VCEO): 200 V
Emitter Base Voltage (VEBO): -5 V
hFE Min: 35
Max Collector Current: 15 A
Transition Frequency: 25 MHz
Collector Emitter Saturation Voltage: -1.5 V