The 2SA2070 is a silicon PNP epitaxial bipolar transistor designed for high-speed switching applications such as DC-DC converters. It is packaged in a SC-62 case, weighing 0.05 g typ. The device has a collector-emitter voltage rating of −50 V, a collector current rating of −1.0 A continuous and −2.0 A pulsed, and a collector power dissipation of 1.0 W at 25°C when mounted on an FR4 board with 645 mm² copper area. It features a DC current gain (hFE) of 200 to 500 at IC = −0.1 A, a collector-emitter saturation voltage of −0.20 V max, and a fall time of 70 ns typ. The junction temperature range is −55°C to 150°C, and the device is RoHS compatible. It meets the standards as specified for environmental compliance by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type Product overview: 2SA2070 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA2070 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2SA2070 |
| Product Name | Bipolar Transistor |
