Toshiba Electronics (UK) Ltd Single Bipolar Transistors 2SA1955FVATPL3Z

Description
Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SA1955FVATPL3ZCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1955FVATPL3ZCT-ND
Single Bipolar Transistors 2SA1955FVATPL3ZCT-ND
Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3

Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3

Buy Now Datasheet
Single Bipolar Transistors - 2SA1955FVATPL3ZTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1955FVATPL3ZTR-ND
Single Bipolar Transistors 2SA1955FVATPL3ZTR-ND
Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3

Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3

Buy Now Datasheet
Singapore
12V 0.4A Bipolar Transistor
276-2SA1955FVATPL3Z
12V 0.4A Bipolar Transistor 276-2SA1955FVATPL3Z
TRANS PNP 12V 0.4A CST3 Product overview: 2SA1955FVATPL3Z from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.4A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1955FVATPL3Z can be used for catalog matching and distributor lookup.

TRANS PNP 12V 0.4A CST3 Product overview: 2SA1955FVATPL3Z from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.4A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1955FVATPL3Z can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1955FVATPL3Z - 097575-2SA1955FVATPL3Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1955FVATPL3Z
097575-2SA1955FVATPL3Z
TRANSISTORS - Transistors (BJT) - Single - 2SA1955FVATPL3Z 097575-2SA1955FVATPL3Z
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 097575-2SA1955FVATPL 3Z Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: CST3 Maximum Current Collector: 400mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 300 @ 10mA, 2V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 097575-2SA1955FVATPL3Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: CST3
Maximum Current Collector: 400mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 300 @ 10mA, 2V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SA1955FVATPL3Z
Bipolar Transistors - BJT 2SA1955FVATPL3Z
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO

Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1955FVATPL3Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1955FVATPL3Z
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1955FVATPL3Z
TRANS PNP 12V 0.4A CST3

TRANS PNP 12V 0.4A CST3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SA1955FVATPL3ZCT-ND 276-2SA1955FVATPL3Z 097575-2SA1955FVATPL3Z 2SA1955FVATPL3Z 2SA1955FVATPL3Z
Product Name Single Bipolar Transistors 12V 0.4A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SA1955FVATPL3Z Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
Package Type SC-101, SOT-883 Tape & Reel (TR) SOT3; CST3 CST3
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT)
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