Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Single - 2SA1955FVATPL3Z 2SA1955FVATPL3Z

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 097575-2SA1955FVATPL3Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: CST3
Maximum Current Collector: 400mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 300 @ 10mA, 2V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3

Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3

TRANS PNP 12V 0.4A CST3 Product overview: 2SA1955FVATPL3Z from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.4A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 0.4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1955FVATPL3Z can be used for catalog matching and distributor lookup.