Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SA1943N 2SA1943N

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075400-2SA1943N Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 30MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N) Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 230V Max Vce (sat): 3V @ 800mA, 8A Collector Cut-off Current(Max): 5μA (ICBO) Typical Gain (hFE) (Min): 80 @ 1A, 5V Maximum Power Dissipation: 150W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075400-2SA1943N Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 30MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N) Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 230V Max Vce (sat): 3V @ 800mA, 8A Collector Cut-off Current(Max): 5μA (ICBO) Typical Gain (hFE) (Min): 80 @ 1A, 5V Maximum Power Dissipation: 150W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single - 2SA1943N - 075400-2SA1943N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1943N
075400-2SA1943N
TRANSISTORS - Transistors (BJT) - Single - 2SA1943N 075400-2SA1943N
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075400-2SA1943N Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 30MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N) Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 230V Max Vce (sat): 3V @ 800mA, 8A Collector Cut-off Current(Max): 5μA (ICBO) Typical Gain (hFE) (Min): 80 @ 1A, 5V Maximum Power Dissipation: 150W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075400-2SA1943N
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 30MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P(N)
Maximum Current Collector: 15A
VCEO Maximum Collector-Emitter Breakdown Voltage: 230V
Max Vce (sat): 3V @ 800mA, 8A
Collector Cut-off Current(Max): 5μA (ICBO)
Typical Gain (hFE) (Min): 80 @ 1A, 5V
Maximum Power Dissipation: 150W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 075400-2SA1943N
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SA1943N
Polarity PNP; PNP
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