Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SA1940-O(Q) 2SA1940-O(Q)

Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036628-2SA1940-O(Q) Length: 15.9 mm Height: 19 mm Number of Pins: 3 Width: 4.8 mm Categories: RF Transistors(BJT) Max Frequency: 30 MHz Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Element Configuration: Single Max Power Dissipation: 80 W Collector Base Voltage (VCBO): 120 V Collector Emitter Voltage (VCEO): 120 V Emitter Base Voltage (VEBO): 5 V Max Collector Current: 8 A Collector Emitter Saturation Voltage: 2 V
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Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036628-2SA1940-O(Q) Length: 15.9 mm Height: 19 mm Number of Pins: 3 Width: 4.8 mm Categories: RF Transistors(BJT) Max Frequency: 30 MHz Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Element Configuration: Single Max Power Dissipation: 80 W Collector Base Voltage (VCBO): 120 V Collector Emitter Voltage (VCEO): 120 V Emitter Base Voltage (VEBO): 5 V Max Collector Current: 8 A Collector Emitter Saturation Voltage: 2 V
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TRANSISTORS - RF Transistors (BJT) - 2SA1940-O(Q) - 1036628-2SA1940-O(Q) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SA1940-O(Q)
1036628-2SA1940-O(Q)
TRANSISTORS - RF Transistors (BJT) - 2SA1940-O(Q) 1036628-2SA1940-O(Q)
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036628-2SA1940-O(Q) Length: 15.9 mm Height: 19 mm Number of Pins: 3 Width: 4.8 mm Categories: RF Transistors(BJT) Max Frequency: 30 MHz Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Element Configuration: Single Max Power Dissipation: 80 W Collector Base Voltage (VCBO): 120 V Collector Emitter Voltage (VCEO): 120 V Emitter Base Voltage (VEBO): 5 V Max Collector Current: 8 A Collector Emitter Saturation Voltage: 2 V

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1036628-2SA1940-O(Q)
Length: 15.9 mm
Height: 19 mm
Number of Pins: 3
Width: 4.8 mm
Categories: RF Transistors(BJT)
Max Frequency: 30 MHz
Popularity: Low
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Element Configuration: Single
Max Power Dissipation: 80 W
Collector Base Voltage (VCBO): 120 V
Collector Emitter Voltage (VCEO): 120 V
Emitter Base Voltage (VEBO): 5 V
Max Collector Current: 8 A
Collector Emitter Saturation Voltage: 2 V

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1036628-2SA1940-O(Q)
Product Name TRANSISTORS - RF Transistors (BJT) - 2SA1940-O(Q)
Package Type SOT3
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