Toshiba America Electronic Components, Inc. 180V 2A Bipolar Transistor 2SA1930

Description
TRANS PNP 180V 2A TO220NIS Product overview: 2SA1930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1930 can be used for catalog matching and distributor lookup.
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Description
TRANS PNP 180V 2A TO220NIS Product overview: 2SA1930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1930 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
180V 2A Bipolar Transistor
276-2SA1930
180V 2A Bipolar Transistor 276-2SA1930
TRANS PNP 180V 2A TO220NIS Product overview: 2SA1930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1930 can be used for catalog matching and distributor lookup.

TRANS PNP 180V 2A TO220NIS Product overview: 2SA1930 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1930 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1930 - 075397-2SA1930 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1930
075397-2SA1930
TRANSISTORS - Transistors (BJT) - Single - 2SA1930 075397-2SA1930
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075397-2SA1930 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 180V Max Vce (sat): 1V @ 100mA, 1A Collector Cut-off Current(Max): 5μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 5V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075397-2SA1930
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 180V
Max Vce (sat): 1V @ 100mA, 1A
Collector Cut-off Current(Max): 5μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 5V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SA1930 075397-2SA1930
Product Name 180V 2A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SA1930
Polarity PNP PNP; PNP
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