Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Single - 2SA1832-GR,LF 2SA1832-GR,LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 106626-2SA1832-GR,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: SSM
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 100mW Surface Mount SSM

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 100mW Surface Mount SSM

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 100mW Surface Mount SSM

TRANS PNP 50V 0.15A SSM Product overview: 2SA1832-GR,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1832-GR,LF can be used for catalog matching and distributor lookup.