Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SA1761 2SA1761

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 153958-2SA1761 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92MOD Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 75mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 100mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 153958-2SA1761 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92MOD Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 75mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 100mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Single - 2SA1761 - 153958-2SA1761 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1761
153958-2SA1761
TRANSISTORS - Transistors (BJT) - Single - 2SA1761 153958-2SA1761
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 153958-2SA1761 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92MOD Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 75mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 100mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 153958-2SA1761
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92MOD
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 75mA, 1.5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 100mA, 2V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 32458620 - Radwell International
Willingboro, NJ, United States
Transistor
32458620
Transistor 32458620
DISCONTINUED BY MANUFACTURER, TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY

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Technical Specifications

  Win Source Electronics Radwell International
Product Category Transistors RF Transistors
Product Number 153958-2SA1761 32458620
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SA1761 Transistor
Polarity PNP; PNP
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