Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SA1360-Y(Q) 2SA1360-Y(Q)

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1036556-2SA1360-Y(Q)
Mounting: SMD (SMT)
Polarity: PNP
Gain Bandwidth Product: 200 MHz
Categories: RF Transistors(BJT)
Case / Package: TO-126
Alternative Parts (Cross-Reference): KSB1151YS; KSA1220AYS; KSB772YSTU; KSA1220YSTU; KSB744AYSTU;
Popularity: Low
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
RoHS: Compliant
Element Configuration: Single
Max Power Dissipation: 1.2 W
Collector Base Voltage (VCBO): -150 V
Collector Emitter Voltage (VCEO): -150 V
Emitter Base Voltage (VEBO): -5 V
hFE Min: 80
Collector Emitter Saturation Voltage: -1 V

Trans GP BJT PNP 150V 0.05A 3-Pin(3+Tab) TO-126IS Product overview: 2SA1360-Y(Q) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 0.05A. Search-friendly keywords include transistor, BJT, switching, amplification, 150V, 0.05A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SA1360-Y(Q) can be used for catalog matching and distributor lookup.