Toshiba Electronics (UK) Ltd 120V 0.1A Bipolar Transistor 2SA1312GRTE85LF

Description
TRANS PNP 120V 0.1A SMINI Product overview: 2SA1312GRTE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1312GRTE85LF can be used for catalog matching and distributor lookup.
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Description
TRANS PNP 120V 0.1A SMINI Product overview: 2SA1312GRTE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1312GRTE85LF can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
120V 0.1A Bipolar Transistor
276-2SA1312GRTE85LF
120V 0.1A Bipolar Transistor 276-2SA1312GRTE85LF
TRANS PNP 120V 0.1A SMINI Product overview: 2SA1312GRTE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1312GRTE85LF can be used for catalog matching and distributor lookup.

TRANS PNP 120V 0.1A SMINI Product overview: 2SA1312GRTE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1312GRTE85LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 2SA1312GRTE85LFTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1312GRTE85LFTR-ND
Single Bipolar Transistors 2SA1312GRTE85LFTR-ND
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1312GRTE85LF - 102797-2SA1312GRTE85LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1312GRTE85LF
102797-2SA1312GRTE85LF
TRANSISTORS - Transistors (BJT) - Single - 2SA1312GRTE85LF 102797-2SA1312GRTE85LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 102797-2SA1312GRTE85 LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 125°C (TJ) Case / Package: S-Mini Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 102797-2SA1312GRTE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: S-Mini
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R - 4669-2SA1312GRTE85LF - Utmel Electronic Limited
Hong Kong, China
Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
4669-2SA1312GRTE85LF
Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R 4669-2SA1312GRTE85LF
Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R

Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1312GRTE85LF - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1312GRTE85LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1312GRTE85LF
TRANS PNP 120V 0.1A SMINI

TRANS PNP 120V 0.1A SMINI

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Utmel Electronic Limited Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 276-2SA1312GRTE85LF 2SA1312GRTE85LFTR-ND 102797-2SA1312GRTE85LF 4669-2SA1312GRTE85LF 2SA1312GRTE85LF
Product Name 120V 0.1A Bipolar Transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SA1312GRTE85LF Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; S-Mini
Packing Method Tape & Reel (TR) Tape Reel; Cut Tape (CT) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
VCEO 120 volts 120 volts 120 volts
TJ 125 C (257 F) 125 C (257 F)
Polarity PNP PNP; PNP PNP; PNP
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