Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Single - 2SA1312GRTE85LF 2SA1312GRTE85LF

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 102797-2SA1312GRTE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 125°C (TJ)
Case / Package: S-Mini
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

TRANS PNP 120V 0.1A SMINI Product overview: 2SA1312GRTE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1312GRTE85LF can be used for catalog matching and distributor lookup.