Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - 2SA1306Y 2SA1306Y

Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036546-2SA1306Y Categories: RF Transistors(BJT) Alternative Parts (Cross-Reference): 2SA1306Y2SA1306-Y; Popularity: Low Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Shortage RoHS: Non-Compliant
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Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036546-2SA1306Y Categories: RF Transistors(BJT) Alternative Parts (Cross-Reference): 2SA1306Y2SA1306-Y; Popularity: Low Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Shortage RoHS: Non-Compliant
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TRANSISTORS - RF Transistors (BJT) - 2SA1306Y - 1036546-2SA1306Y - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SA1306Y
1036546-2SA1306Y
TRANSISTORS - RF Transistors (BJT) - 2SA1306Y 1036546-2SA1306Y
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036546-2SA1306Y Categories: RF Transistors(BJT) Alternative Parts (Cross-Reference): 2SA1306Y2SA1306-Y; Popularity: Low Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Shortage RoHS: Non-Compliant

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1036546-2SA1306Y
Categories: RF Transistors(BJT)
Alternative Parts (Cross-Reference): 2SA1306Y2SA1306-Y;
Popularity: Low
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Shortage
RoHS: Non-Compliant

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Singapore, Singapore
Bipolar Transistor
283-2SA1306Y
Bipolar Transistor 283-2SA1306Y
Product overview: 2SA1306Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SA1306Y can be used for catalog matching and distributor lookup.

Product overview: 2SA1306Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SA1306Y can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Bipolar RF Transistors
Product Number 1036546-2SA1306Y 283-2SA1306Y
Product Name TRANSISTORS - RF Transistors (BJT) - 2SA1306Y Bipolar Transistor
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