Toshiba Electronics (UK) Ltd Single Bipolar Transistors 2SA1163-BL,LF

Description
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini
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Description
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini
Request a Quote
Datasheet
Datasheet Summary
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The 1380727-2SA1163-BL,LF is a silicon PNP bipolar junction transistor designed for audio frequency general-purpose amplifier applications. It is AEC-Q101 qualified, indicating suitability for automotive applications. The transistor features a maximum collector-emitter voltage (VCEO) of -120 V and a maximum collector current (IC) of -100 mA, making it capable of handling high voltage and current levels. With a DC current gain (hFE) ranging from 200 to 700, this transistor offers excellent linearity, particularly at low currents. It has a low noise figure (NF) of 1 dB (typical) and a maximum saturation voltage (VCE(sat)) of 300 mV at specified conditions. The transition frequency is rated at 100 MHz, which is suitable for high-frequency applications. The device is packaged in a small TO-236 (SOT-23) form factor, facilitating surface mount applications. It operates effectively within a temperature range of -55¬8C to 150¬8C, with a maximum junction temperature of 125¬8C for standard use. The product is supplied on tape and reel, with a moisture sensitivity level of 1, indicating it can be handled without special precautions.

Datasheet Summary
Powered by GS/AI

The 1380727-2SA1163-BL,LF is a silicon PNP bipolar junction transistor designed for audio frequency general-purpose amplifier applications. It is AEC-Q101 qualified, indicating suitability for automotive applications. The transistor features a maximum collector-emitter voltage (VCEO) of -120 V and a maximum collector current (IC) of -100 mA, making it capable of handling high voltage and current levels. With a DC current gain (hFE) ranging from 200 to 700, this transistor offers excellent linearity, particularly at low currents. It has a low noise figure (NF) of 1 dB (typical) and a maximum saturation voltage (VCE(sat)) of 300 mV at specified conditions. The transition frequency is rated at 100 MHz, which is suitable for high-frequency applications. The device is packaged in a small TO-236 (SOT-23) form factor, facilitating surface mount applications. It operates effectively within a temperature range of -55¬8C to 150¬8C, with a maximum junction temperature of 125¬8C for standard use. The product is supplied on tape and reel, with a moisture sensitivity level of 1, indicating it can be handled without special precautions.

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2SA1163-BLLFTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1163-BLLFTR-ND
Single Bipolar Transistors 2SA1163-BLLFTR-ND
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Buy Now Datasheet
Single Bipolar Transistors - 2SA1163-BLLFCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1163-BLLFCT-ND
Single Bipolar Transistors 2SA1163-BLLFCT-ND
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Buy Now Datasheet
Single Bipolar Transistors - 2SA1163-BLLFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1163-BLLFDKR-ND
Single Bipolar Transistors 2SA1163-BLLFDKR-ND
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1380727-2SA1163-BL,LF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1380727-2SA1163-BL,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1380727-2SA1163-BL,LF
Win Source Part Number: 1380727-2SA1163-BL,L F Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Single Bipolar Transistors Package: Tape & Reel Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Temperature Range - Operating: 125°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. HTSUS: 8541.21.0075 Mfr: Toshiba Semiconductor and Storage Base Product Number: 2SA1163 Moisture Sensitivity Level (MSL): 1 (Unlimited) Standard Package: 3,000 pcs

Win Source Part Number: 1380727-2SA1163-BL,LF
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Package: Tape & Reel
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Temperature Range - Operating: 125°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
HTSUS: 8541.21.0075
Mfr: Toshiba Semiconductor and Storage
Base Product Number: 2SA1163
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 3,000 pcs

Buy Now Datasheet
Singapore, Singapore
120V 0.1A Bipolar Transistor
276-2SA1163-BL,LF
120V 0.1A Bipolar Transistor 276-2SA1163-BL,LF
TRANS PNP 120V 0.1A SMINI Product overview: 2SA1163-BL,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1163-BL,LF can be used for catalog matching and distributor lookup.

TRANS PNP 120V 0.1A SMINI Product overview: 2SA1163-BL,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1163-BL,LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1163-BL,LF - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1163-BL,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1163-BL,LF
TRANS PNP 120V 0.1A SMINI

TRANS PNP 120V 0.1A SMINI

Supplier's Site
TRANS PNP 120V 0.1A S-MINI - 4669-2SA1163-BL,LF - Utmel Electronic Limited
Hong Kong, China
TRANS PNP 120V 0.1A S-MINI
4669-2SA1163-BL,LF
TRANS PNP 120V 0.1A S-MINI 4669-2SA1163-BL,LF
TRANS PNP 120V 0.1A S-MINI

TRANS PNP 120V 0.1A S-MINI

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited Utmel Electronic Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 2SA1163-BLLFTR-ND 1380727-2SA1163-BL,LF 276-2SA1163-BL,LF 2SA1163-BL,LF 4669-2SA1163-BL,LF
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 120V 0.1A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS PNP 120V 0.1A S-MINI
Polarity PNP PNP PNP PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3 Tape & Reel (TR) S-Mini
IC(max) 100 milliamps 100 milliamps 100 milliamps
Power Gain 350 dB
Operating Frequency 100 MHz
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