Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - 2SA1020-Y 2SA1020-Y

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 153293-2SA1020-Y
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Family Name: 2SA1020
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92MOD
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 50mA, 1A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 70 @ 500mA, 2V
Maximum Power Dissipation: 900mW
Alternative Parts (Cross-Reference): 2SA1020L-Y-BP-HF; 2SA1020L-Y-BP; 2SA1020G;
Introduction Date: October 03, 1997
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2019
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

TRANS PNP 2A 50V TO226-3 Product overview: 2SA1020-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 2A, 50V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1020-Y can be used for catalog matching and distributor lookup.