Toshiba America Electronic Components, Inc. 1A 160V Bipolar Transistor 2SA1013

Description
TRANS PNP 1A 160V TO226-3 Product overview: 2SA1013 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 160V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 160V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1013 can be used for catalog matching and distributor lookup.
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Description
TRANS PNP 1A 160V TO226-3 Product overview: 2SA1013 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 160V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 160V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1013 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
1A 160V Bipolar Transistor
276-2SA1013
1A 160V Bipolar Transistor 276-2SA1013
TRANS PNP 1A 160V TO226-3 Product overview: 2SA1013 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 160V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 160V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1013 can be used for catalog matching and distributor lookup.

TRANS PNP 1A 160V TO226-3 Product overview: 2SA1013 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 160V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 160V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1013 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1013 - 153268-2SA1013 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1013
153268-2SA1013
TRANSISTORS - Transistors (BJT) - Single - 2SA1013 153268-2SA1013
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 153268-2SA1013 Packaging: Bulk Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92L Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 1.5V @ 50mA, 500mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 60 @ 200mA, 5V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 153268-2SA1013
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92L
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 60 @ 200mA, 5V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 276-2SA1013 153268-2SA1013
Product Name 1A 160V Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SA1013
Polarity PNP PNP; PNP
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