Torex Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - XP162A11C0PR XP162A11C0PR

Description
Manufacturer: Torex Semiconductor Ltd Win Source Part Number: 056381-XP162A11C0PR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Dimension: TO-243AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Max Input Capacitance: 280pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Torex Semiconductor Ltd Win Source Part Number: 056381-XP162A11C0PR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Dimension: TO-243AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Max Input Capacitance: 280pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XP162A11C0PR - 056381-XP162A11C0PR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XP162A11C0PR
056381-XP162A11C0PR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - XP162A11C0PR 056381-XP162A11C0PR
Manufacturer: Torex Semiconductor Ltd Win Source Part Number: 056381-XP162A11C0PR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89 Dimension: TO-243AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A (Ta) Max Input Capacitance: 280pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Torex Semiconductor Ltd
Win Source Part Number: 056381-XP162A11C0PR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A (Ta)
Max Input Capacitance: 280pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 2.5A SOT89 MOSFET Transistor
285-XP162A11C0PR
30V 2.5A SOT89 MOSFET Transistor 285-XP162A11C0PR
MOSFET P-CH 30V 2.5A SOT89 Product overview: XP162A11C0PR from Torex Semiconductor Ltd. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, SOT89. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, SOT89, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-XP162A11C0PR can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 2.5A SOT89 Product overview: XP162A11C0PR from Torex Semiconductor Ltd. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, SOT89. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, SOT89, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-XP162A11C0PR can be used for catalog matching and distributor lookup.

Supplier's Site
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 - 817-XP162A11C0PR - Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
817-XP162A11C0PR
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 817-XP162A11C0PR
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 056381-XP162A11C0PR 285-XP162A11C0PR 817-XP162A11C0PR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - XP162A11C0PR 30V 2.5A SOT89 MOSFET Transistor Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts
PD 2000 milliwatts 2000 milliwatts
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