MOSFET P-CH 30V 2.5A SOT89 Product overview: XP162A11C0PR from Torex Semiconductor Ltd. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, SOT89. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, SOT89, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-XP162A11C0PR can be used for catalog matching and distributor lookup.
Manufacturer: Torex Semiconductor Ltd
Win Source Part Number: 056381-XP162A11C0PR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A (Ta)
Max Input Capacitance: 280pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 285-XP162A11C0PR | 056381-XP162A11C0PR | 817-XP162A11C0PR |
| Product Name | 30V 2.5A SOT89 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - XP162A11C0PR | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel |
| PD | 2000 milliwatts | 2000 milliwatts | |
| TJ | 150 C (302 F) | 150 C (302 F) |