Texas Instruments High-Performance Analog TPS2811D

Description
NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8
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Description
NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8
Request a Quote
Datasheet
Datasheet Summary
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The TPS2811D is a dual inverting MOSFET driver in an 8-pin SOIC package, designed to deliver up to 2 A of peak output current into capacitive loads. It operates with a supply voltage range of 4 V to 14 V and includes an integrated regulator that extends input voltage capability to 40 V. The device features a 5-µA supply current, 25-ns maximum rise and fall times, and a propagation delay of 40 ns max with a 1-nF load. It operates over an ambient temperature range of −40°C to 125°C and meets RoHS standards. The output stage ensures fast switching and low shoot-through current, with compatibility for driving both n-channel and p-channel MOSFETs.

Datasheet Summary
Powered by GS/AI

The TPS2811D is a dual inverting MOSFET driver in an 8-pin SOIC package, designed to deliver up to 2 A of peak output current into capacitive loads. It operates with a supply voltage range of 4 V to 14 V and includes an integrated regulator that extends input voltage capability to 40 V. The device features a 5-µA supply current, 25-ns maximum rise and fall times, and a propagation delay of 40 ns max with a 1-nF load. It operates over an ambient temperature range of −40°C to 125°C and meets RoHS standards. The output stage ensures fast switching and low shoot-through current, with compatibility for driving both n-channel and p-channel MOSFETs.

Suppliers

Company
Product
Description
Supplier Links
 - TPS2811D - Rochester Electronics
Newburyport, MA, United States
NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8

NAND Gate Based MOSFET Driver, 2A, BIMOS, PDSO8

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number TPS2811D
Package Type SOIC8
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