The TPS1101PWR is a single P-channel enhancement-mode MOSFET in a 16-pin TSSOP package, designed for low-voltage power distribution in battery-powered systems. It has a maximum drain-to-source voltage of -15 V, a continuous drain current of -1.1 A at 25°C, and a typical on-state resistance of 139 mΩ at -10 V gate-source voltage. The device features a gate-to-source threshold voltage of -1.5 V maximum and is rated for an operating junction temperature range of -40°C to 150°C. It complies with RoHS standards and has a moisture sensitivity level of 1. ESD protection is rated up to 2 kV per MIL-STD-883C, Method 3015.
Single P-channel Enhancement-Mode MOSFET 16-TSSOP
Small Signal Field-Effect Transistor, 2.18A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-Channel 15V 2.18A (Ta) 710mW (Ta) Surface Mount 16-TSSOP
MOSFET Single P-Ch Enh-Mode MOSFET
MOSFET P-CH 15V 2.18A 16TSSOP
| Texas Instruments | Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | TPS1101PWR | TPS1101PWR | 296-13384-2-ND | TPS1101PWR | TPS1101PWR |
| Product Name | TPS1101 Single P-channel Enhancement-Mode MOSFET | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel |
