Texas Instruments TPS1101 Single P-channel Enhancement-Mode MOSFET TPS1101D

Description
Single P-channel Enhancement-Mode MOSFET 8-SOIC
  • TPS1101 Single P-channel Enhancement-Mode MOSFET - TPS1101D - Texas Instruments
    Texas Instruments
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1101D - 033584-TPS1101D - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 296-3381-5-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TPS1101D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TPS1101D - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPS1101D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Single P-channel Enhancement-Mode MOSFET 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TPS1101 Single P-channel Enhancement-Mode MOSFET - TPS1101D - Texas Instruments
Texas Instruments
Dallas, TX, United States
TPS1101 Single P-channel Enhancement-Mode MOSFET
TPS1101D
TPS1101 Single P-channel Enhancement-Mode MOSFET TPS1101D
Single P-channel Enhancement-Mode MOSFET 8-SOIC

Single P-channel Enhancement-Mode MOSFET 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1101D - 033584-TPS1101D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1101D
033584-TPS1101D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1101D 033584-TPS1101D
Manufacturer: Texas Instruments Win Source Part Number: 033584-TPS1101D Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 791mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 15V Continuous Drain Current at 25°C: 2.3A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 11.25nC @ 10V Maximum Gate-Source Voltage: +2V, -15V Maximum Rds On at Id,Vgs: 90 mOhm @ 2.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 033584-TPS1101D
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 791mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 11.25nC @ 10V
Maximum Gate-Source Voltage: +2V, -15V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 296-3381-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-3381-5-ND
Single FETs, MOSFETs 296-3381-5-ND
P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC

P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - TPS1101D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TPS1101D
Single FETs, MOSFETs TPS1101D
MOSFET P-CH 15V 2.3A 8SOIC

MOSFET P-CH 15V 2.3A 8SOIC

Supplier's Site Datasheet
- TPS1101D - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
TPS1101D
TPS1101D
Small Signal Field-Effect Transistor, 2.3A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Small Signal Field-Effect Transistor, 2.3A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TPS1101D
MOSFET TPS1101D
MOSFET Single P-Ch Enh-Mode MOSFET

MOSFET Single P-Ch Enh-Mode MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPS1101D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TPS1101D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TPS1101D
MOSFET P-CH 15V 2.3A 8SOIC

MOSFET P-CH 15V 2.3A 8SOIC

Supplier's Site

Technical Specifications

  Texas Instruments Win Source Electronics DigiKey ODG (Origin Data Global) Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TPS1101D 033584-TPS1101D 296-3381-5-ND TPS1101D TPS1101D TPS1101D TPS1101D
Product Name TPS1101 Single P-channel Enhancement-Mode MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1101D Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 15 volts 15 volts
PD 791 milliwatts 791 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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