The TPS1100PW is a single P-channel enhancement-mode MOSFET in an 8-pin TSSOP package, designed for low-voltage power distribution in battery-powered systems. It has a maximum drain-to-source voltage of -15 V, a gate-to-source threshold voltage of -1.5 V max, and a typical on-state resistance of 180 mΩ at -10 V gate drive. The device supports continuous drain current up to -1 A at 25°C, with a maximum junction temperature of 150°C. It is ESD-protected up to 2 kV per MIL-STD-883C, Method 3015, and meets RoHS standards. The package has a height of 3.6 mm and is available in a left-end taped and reeled format.
Single P-channel Enhancement-Mode MOSFET 8-TSSOP
P-Channel 15V 1.27A (Ta) 504mW (Ta) Surface Mount 8-TSSOP
Small Signal Field-Effect Transistor, 1.27A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CH 15V 1.27A 8TSSOP
MOSFET Single P-Ch Enh-Mode MOSFET
| Texas Instruments | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TPS1100PW | TPS1100PW-ND | TPS1100PW | TPS1100PW | TPS1100PW |
| Product Name | TPS1100 Single P-channel Enhancement-Mode MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | P-Channel | P-Channel | P-Channel |
