Texas Instruments TPS1100 Single P-channel Enhancement-Mode MOSFET TPS1100DR

Single P-channel Enhancement-Mode MOSFET 8-SOIC

Single P-channel Enhancement-Mode MOSFET 8-SOIC Product overview: TPS1100DR from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TPS1100DR can be used for catalog matching and distributor lookup.

MOSFET P-CH 15V 1.6A 8SOIC

MOSFET P-CH 15V 1.6A 8SOIC

P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC

MOSFET P-CH 15V 1.6A 8SOIC

Small Signal Field-Effect Transistor, 1.6A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Manufacturer: Texas Instruments
Win Source Part Number: 083912-TPS1100DR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 791mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.45nC @ 10V
Maximum Gate-Source Voltage: +2V, -15V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance