Win Source Part Number: 1147661-CSD87502Q2T
Category: Discrete Semiconductor Products>Transistors
Series: NexFET™
Package: Tape & Reel
Standard Package: 250
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 2.3W
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CSD87502Q2T .;
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Texas Instruments
Other Names: 296-43692-6,296-4369
Base Product Number: CSD87502
Mosfet Array 2 N-Channel (Dual) 30V 5A 2.3W Surface Mount 6-WSON (2x2)
Mosfet Array 2 N-Channel (Dual) 30V 5A 2.3W Surface Mount 6-WSON (2x2)
Mosfet Array 2 N-Channel (Dual) 30V 5A 2.3W Surface Mount 6-WSON (2x2)
6-Terminal Dual Synchronous Power Module Product overview: CSD87502Q2T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD87502Q2T can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 5A 6WSON
MOSFET 2N-CH 30V 5A 6WSON
MOSFET, DUAL N-CH, 30V, WSON-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET 30V, N ch NexFET MOSFETG , dual SON2x2, 42mOhm 6-WSON -55 to 150
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1147661-CSD87502Q2T | 296-43692-1-ND | 289-CSD87502Q2T | CSD87502Q2T | CSD87502Q2T | 29AH3854 | CSD87502Q2T |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Dual MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 30V, Wson-6; Transistor Polarity Texas Instruments | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
