Manufacturer: Texas Instruments
Win Source Part Number: 013376-CSD87330Q3D
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-LSON (3.3x3.3)
Maximum Power Dissipation: 6W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 5.8nC @ 4.5V
Max Input Capacitance: 900pF @ 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 20A 8SON
Mosfet Array 2 N-Channel (Half Bridge) 30V 20A 6W Surface Mount 8-LSON (3.3x3.3)
Mosfet Array 2 N-Channel (Half Bridge) 30V 20A 6W Surface Mount 8-LSON (3.3x3.3)
Mosfet Array 2 N-Channel (Half Bridge) 30V 20A 6W Surface Mount 8-LSON (3.3x3.3)
MOSFET, DUAL N-CH, 30V, 20A, LSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1V; Power Dissipation RoHS Compliant: Yes
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
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| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Karl Kruse GmbH & Co. KG | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 013376-CSD87330Q3D | CSD87330Q3D | 296-29660-6-ND | 28AH2112 | CSD87330Q3D | CSD87330Q3D | 815-CSD87330Q3D | CSD87330Q3D |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD87330Q3D | FET, MOSFET Arrays | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 30V, 20A, Lson-8; Transistor Polarity Texas Instruments | Synchronous Buck NexFET Power Block 8-Pin SON EP T/R | MOSFET | MOSFET 2N-CH 30V 20A 8SON | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 6000 milliwatts | 6000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
