Texas Instruments High-Performance Analog FET, MOSFET Arrays CSD86360Q5D

Mosfet Array 2 N-Channel (Half Bridge) 25V 50A 13W Surface Mount 8-LSON (5x6)

Mosfet Array 2 N-Channel (Half Bridge) 25V 50A 13W Surface Mount 8-LSON (5x6)

Mosfet Array 2 N-Channel (Half Bridge) 25V 50A 13W Surface Mount 8-LSON (5x6)

8-Pin Dual Power Module, 22V In, 150C Max Product overview: CSD86360Q5D from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 22V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 22V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD86360Q5D can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 25V 50A 8SON

Manufacturer: Texas Instruments
Win Source Part Number: 1163554-CSD86360Q5D
Series: NexFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerLDFN
Mounting: SMD
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 50A
Power - Max: 13W
Family Name: CSD86360Q5D
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.ti.com
Manufacturer Package: 8-LSON (5x6)
Drain Source Voltage: 25V
Vgs(th) (Maximum) @ Id: 2.1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 12.6nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 2060pF @ 12.5
Introduction Date: September 28, 2012
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2028
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance