25V 40A N-CH Power Stage IC, 6mR Rds(on) Product overview: CSD86350Q5D from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 40A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD86350Q5D can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 25V 40A 8SON
Mosfet Array 2 N-Channel (Half Bridge) 25V 40A 13W Surface Mount 8-LSON (5x6)
Mosfet Array 2 N-Channel (Half Bridge) 25V 40A 13W Surface Mount 8-LSON (5x6)
Mosfet Array 2 N-Channel (Half Bridge) 25V 40A 13W Surface Mount 8-LSON (5x6)
MOSFET Synch Buck NexFET Pwr Block MOSFET
IC, SYNC, BUCK, NEXFET, 8SON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power RoHS Compliant: Yes
MOSFET 2N-CH 25V 40A 8LSON
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 289-CSD86350Q5D | CSD86350Q5D | 296-27532-1-ND | CSD86350Q5D | 33AH3882 | CSD86350Q5D |
| Product Name | 25V 40A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Ic, Sync, Buck, Nexfet, 8Son; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | ||||
| PD | 13000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 25 volts |
