Manufacturer: Texas Instruments
Win Source Part Number: 771891-CSD85301Q2T
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-WDFN Exposed Pad
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 5V Drive
Current - Continuous Drain (Id) @ 25°C: 5A
Power - Max: 2.3W
Categories: Discrete Semiconductor Products
Manufacturer Package: 6-WSON (2x2)
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 469pF @ 10V
Rds On (Maximum) @ Id, Vgs: 27 mOhm @ 5A, 4.5V
Alternative Parts (Cross-Reference): CSD85301Q2; TSM250N02DCQ RFG; CSD85301Q2T;
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
20V, N ch NexFET MOSFET™, dual SON2x2, 27mOhm 6-WSON -55 to 150 Product overview: CSD85301Q2T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 27mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 27mOhm, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD85301Q2T can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 5A 2.3W Surface Mount 6-WSON (2x2)
Mosfet Array 2 N-Channel (Dual) 20V 5A 2.3W Surface Mount 6-WSON (2x2)
Mosfet Array 2 N-Channel (Dual) 20V 5A 2.3W Surface Mount 6-WSON (2x2)
MOSFET 2N-CH 20V 5A 6WSON
MOSFET, DUAL N-CH, 20V, 5A, WSON-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power RoHS Compliant: Yes
MOSFET Dual N-Channel NexFET Pwr MOSFET
MOSFET 2N-CH 20V 5A 6WSON
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 771891-CSD85301Q2T | 289-CSD85301Q2T | 296-38668-1-ND | 815-CSD85301Q2T | 28AH2110 | CSD85301Q2T | CSD85301Q2T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD85301Q2T | Dual 20V 27mOhm MOSFET Transistor | FET, MOSFET Arrays | MOSFET 2N-CH 20V 5A 6WSON | Mosfet, Dual N-Ch, 20V, 5A, Wson-6; Transistor Polarity Texas Instruments | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | 6-WDFN Exposed Pad | TO-3 | ||||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| Transistor Technology / Material | SILICON |
