Texas Instruments High-Performance Analog Single FETs, MOSFETs CSD25303W1015

Description
P-Channel 20V 3A (Tc) 1.5W (Ta) Surface Mount 6-DSBGA (1x1.5)
Request a Quote Datasheet
Description
P-Channel 20V 3A (Tc) 1.5W (Ta) Surface Mount 6-DSBGA (1x1.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 296-28317-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-28317-2-ND
Single FETs, MOSFETs 296-28317-2-ND
P-Channel 20V 3A (Tc) 1.5W (Ta) Surface Mount 6-DSBGA (1x1.5)

P-Channel 20V 3A (Tc) 1.5W (Ta) Surface Mount 6-DSBGA (1x1.5)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25303W1015 - 1030672-CSD25303W1015 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25303W1015
1030672-CSD25303W1015
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25303W1015 1030672-CSD25303W1015
Manufacturer: Texas Instruments Win Source Part Number: 1030672-CSD25303W101 5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DSBGA (1x1.5) Dimension: 6-UFBGA, DSBGA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.3nC @ 4.5V Max Input Capacitance: 435pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 58 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 1030672-CSD25303W1015
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DSBGA (1x1.5)
Dimension: 6-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.3nC @ 4.5V
Max Input Capacitance: 435pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 58 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET P-CH 20V 3A 6DSBGA - 815-CSD25303W1015 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 20V 3A 6DSBGA
815-CSD25303W1015
MOSFET P-CH 20V 3A 6DSBGA 815-CSD25303W1015
MOSFET P-CH 20V 3A 6DSBGA

MOSFET P-CH 20V 3A 6DSBGA

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD25303W1015 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD25303W1015
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD25303W1015
MOSFET P-CH 20V 3A 6DSBGA

MOSFET P-CH 20V 3A 6DSBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 296-28317-2-ND 1030672-CSD25303W1015 815-CSD25303W1015 CSD25303W1015
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25303W1015 MOSFET P-CH 20V 3A 6DSBGA Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 6-UFBGA, DSBGA SOT3; 6-DSBGA (1x1.5) 6-UFBGA, DSBGA
V(BR)DSS 20 volts -20 volts
PD 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data