Texas Instruments Standard Linear and Logic Single FETs, MOSFETs CSD19538Q3AT

Description
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)
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Description
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 296-44473-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44473-1-ND
Single FETs, MOSFETs 296-44473-1-ND
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

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Single FETs, MOSFETs - 296-44473-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44473-6-ND
Single FETs, MOSFETs 296-44473-6-ND
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

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Single FETs, MOSFETs - 296-44473-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44473-2-ND
Single FETs, MOSFETs 296-44473-2-ND
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT - 1030664-CSD19538Q3AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT
1030664-CSD19538Q3AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT 1030664-CSD19538Q3AT
Manufacturer: Texas Instruments Win Source Part Number: 1030664-CSD19538Q3AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-VSONP (3x3.15) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3.8V @ 250μA Max Gate Charge: 4.3nC @ 10V Max Input Capacitance: 454pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 59 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 1030664-CSD19538Q3AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 23W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSONP (3x3.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 3.8V @ 250μA
Max Gate Charge: 4.3nC @ 10V
Max Input Capacitance: 454pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 59 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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Single FETs, MOSFETs - CSD19538Q3AT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD19538Q3AT
Single FETs, MOSFETs CSD19538Q3AT
MOSFET N-CH 100V 15A 8VSON

MOSFET N-CH 100V 15A 8VSON

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD19538Q3AT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD19538Q3AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD19538Q3AT
MOSFET N-CH 100V 15A 8VSON

MOSFET N-CH 100V 15A 8VSON

Supplier's Site
Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments - 28AH2109 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments
28AH2109
Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments 28AH2109
MOSFET, N-CH, 100V, 14A, SON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 14A, SON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150

MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 296-44473-1-ND 1030664-CSD19538Q3AT CSD19538Q3AT CSD19538Q3AT 28AH2109 CSD19538Q3AT
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type 8-PowerVDFN SOT3; 8-VSONP (3x3.15) 8-PowerVDFN 8-PowerVDFN TO-3
V(BR)DSS 100 volts 100 volts
PD 2800 to 23000 milliwatts 2800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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