Texas Instruments Standard Linear and Logic TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT CSD19538Q3AT

Description
Manufacturer: Texas Instruments Win Source Part Number: 1030664-CSD19538Q3AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-VSONP (3x3.15) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3.8V @ 250μA Max Gate Charge: 4.3nC @ 10V Max Input Capacitance: 454pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 59 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Texas Instruments Win Source Part Number: 1030664-CSD19538Q3AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-VSONP (3x3.15) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3.8V @ 250μA Max Gate Charge: 4.3nC @ 10V Max Input Capacitance: 454pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 59 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT - 1030664-CSD19538Q3AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT
1030664-CSD19538Q3AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT 1030664-CSD19538Q3AT
Manufacturer: Texas Instruments Win Source Part Number: 1030664-CSD19538Q3AT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 23W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-VSONP (3x3.15) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3.8V @ 250μA Max Gate Charge: 4.3nC @ 10V Max Input Capacitance: 454pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 59 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 1030664-CSD19538Q3AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 23W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSONP (3x3.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 3.8V @ 250μA
Max Gate Charge: 4.3nC @ 10V
Max Input Capacitance: 454pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 59 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 296-44473-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44473-1-ND
Single FETs, MOSFETs 296-44473-1-ND
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - 296-44473-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44473-6-ND
Single FETs, MOSFETs 296-44473-6-ND
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - 296-44473-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44473-2-ND
Single FETs, MOSFETs 296-44473-2-ND
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - CSD19538Q3AT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD19538Q3AT
Single FETs, MOSFETs CSD19538Q3AT
MOSFET N-CH 100V 15A 8VSON

MOSFET N-CH 100V 15A 8VSON

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150

MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150

Buy Now Datasheet
Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments - 28AH2109 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments
28AH2109
Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments 28AH2109
MOSFET, N-CH, 100V, 14A, SON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 14A, SON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD19538Q3AT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD19538Q3AT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD19538Q3AT
MOSFET N-CH 100V 15A 8VSON

MOSFET N-CH 100V 15A 8VSON

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1030664-CSD19538Q3AT 296-44473-1-ND CSD19538Q3AT CSD19538Q3AT 28AH2109 CSD19538Q3AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
PD 2800 to 23000 milliwatts 2800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-VSONP (3x3.15) 8-PowerVDFN 8-PowerVDFN TO-3 8-PowerVDFN
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