MOSFET N-CH 100V 15A 8VSON
100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150 Product overview: CSD19538Q3AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 61 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 61 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19538Q3AT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030664-CSD19538Q3AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 23W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSONP (3x3.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 3.8V @ 250μA
Max Gate Charge: 4.3nC @ 10V
Max Input Capacitance: 454pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 59 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surface Mount 8-VSONP (3x3.3)
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150
MOSFET, N-CH, 100V, 14A, SON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 15A 8VSON
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD19538Q3AT | 278-CSD19538Q3AT | 1030664-CSD19538Q3AT | 296-44473-1-ND | CSD19538Q3AT | 28AH2109 | CSD19538Q3AT |
| Product Name | Single FETs, MOSFETs | N-Channel 61 mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19538Q3AT | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 14A, Son-8; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 15000 milliamps | 14000 milliamps | |||||
| PD | 2800 milliwatts | 2800 to 23000 milliwatts |
