Win Source Part Number: 1131740-CSD19538Q2T
Category: Discrete Semiconductor Products>Transistors
Series: NexFET™
Package: Tape & Reel
Standard Package: 250
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): CSD19538Q2T .;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Texas Instruments
Other Names: 296-44612-1,296-4461
Base Product Number: CSD19538
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
100V, N ch NexFET MOSFET™, single SON2x2, 59mOhm 6-WSON -55 to 150 Product overview: CSD19538Q2T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 59mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 59mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19538Q2T can be used for catalog matching and distributor lookup.
N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
MOSFET N-CH 100V 13.1A 6WSON
MOSFET N-CH 100V 13.1A 6WSON
MOSFET, N-CH, 100V, 13.1A, WSON-6; Transistor Polarity:N Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power RoHS Compliant: Yes
MOSFET 100V, 49mOhm NexFET Power MOSFET
MOSFET NCH 100V 13.1A 6WSON
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1131740-CSD19538Q2T | 278-CSD19538Q2T | 296-44612-1-ND | CSD19538Q2T | CSD19538Q2T | 52AH3718 | CSD19538Q2T | 815-CSD19538Q2T |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 59mOhm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 13.1A, Wson-6; Transistor Polarity Texas Instruments | MOSFET | MOSFET NCH 100V 13.1A 6WSON |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| PD | 2500 to 20200 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
