100V N-Ch MOSFET, 2.4mΩ, TO-263AB, Single D2PAK Product overview: CSD19536KTTT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19536KTTT can be used for catalog matching and distributor lookup.
N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
Manufacturer: Texas Instruments
Win Source Part Number: 771889-CSD19536KTTT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Family Name: CSD19536KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 153nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 12000pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 375W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): APTM10DAM02G; IPB027N10N3GXT; APTM10UM02FAG; NDBA180N10BT4H;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 200A DDPAK
NexFET N-channel MOSFET 100V 190A TO220
NexFET N-channel MOSFET 100V 190A TO220
NexFET N-channel MOSFET 100V 190A TO220
MOSFET 100V N-Channel NexFET Power MOSFET
MOSFET N-CH 100V 200A DDPAK
MOSFET, N-CH, 100V, 200A, TO-263 ROHS COMPLIANT: NO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-CSD19536KTTT | 296-41136-1-ND | 771889-CSD19536KTTT | CSD19536KTTT | 9009857P | 9009857 | CSD19536KTTT | CSD19536KTTT | 03AJ0139 |
| Product Name | 100V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19536KTTT | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 200A, To-263 Rohs Compliant Texas Instruments |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263; TO-263 | TO-263; D2pak (to-263) | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | TO-3; TO-263 | ||
| PD | 375000 milliwatts | 375000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
