100V N-Ch MOSFET, 3.4mΩ, TO-263AB, Single Product overview: CSD19535KTTT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19535KTTT can be used for catalog matching and distributor lookup.
N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
Manufacturer: Texas Instruments
Win Source Part Number: 771888-CSD19535KTTT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Family Name: CSD19535KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7930pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.4 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): STH310N10F7-6; APTM10SKM02G; APTM10DAM02G; IPB027N10N3GXT; NDPL180N10BG; TK100A10N1,S4X; NDBA180N10BT4H;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
MOSFET 100V N-Channel NexFET Power MOSFET
MOSFET N-CH 100V 200A DDPAK
MOSFET N-CH 100V 200A DDPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-CSD19535KTTT | 296-41135-1-ND | 771888-CSD19535KTTT | CSD19535KTTT | CSD19535KTTT | CSD19535KTTT |
| Product Name | 100V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19535KTTT | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | ||
| PD | 300000 milliwatts | 300000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
