MOSFET N-CH 80V 200A DDPAK
80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 3-DDPAK/TO-263 -55 to 175 Product overview: CSD19506KTTT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 2.3 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.3 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19506KTTT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 771883-CSD19506KTTT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Family Name: CSD19506KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 3.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 156nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 12200pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 375W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): CSD19506KTT;
Introduction Date: March 21, 2016
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
IC MOSFET N-CH 80V TO-220
MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175
MOSFET N-CH 80V 200A DDPAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD19506KTTT | 278-CSD19506KTTT | 771883-CSD19506KTTT | 296-CSD19506KTTTTR-ND | 815-CSD19506KTTT | CSD19506KTTT | CSD19506KTTT |
| Product Name | Single FETs, MOSFETs | N-Channel 2.3 mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19506KTTT | Single FETs, MOSFETs | IC MOSFET N-CH 80V TO-220 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 80 volts | 80 volts | |||||
| IDSS | 200000 milliamps | ||||||
| PD | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts |
